Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

Abstract

The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which can not be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic and topological properties of EuCd2As2 can be greatly modified by doping. These work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.

22 pages,5 figures

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Cited by in corpus (11)

• Ab-initio overestimation of the topological region in Eu-based compounds
• Ferrimagnetic Regulation of Weyl Fermions in a Noncentrosymmetric Magnetic Weyl Semimetal
• The discovery of three-dimensional Van Hove singularity
• Electronic band reconstruction across the insulator-metal transition in colossal magnetoresistive EuCd2P2
• Large unconventional anomalous Hall effect arising from spin chirality within domain walls of an antiferromagnet EuZn${}_2$Sb${}_2$
• Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2
• Absence of Weyl nodes in EuCd${}_2$As${}_2$ revealed by the carrier density dependence of the anomalous Hall effect
• Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2
• Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping
• Recent advances in understanding and manipulating magnetic and electronic properties of Eu$M_2{X}_2$ ($M$ = Zn, Cd; $X$ = P, As)
• Disorder Driven Non-Anderson Transition in a Weyl Semimetal