Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Abstract

Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.

9 pages, 9 figures

References in corpus (4)

• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Imaging current-induced switching of antiferromagnetic domains in CuMnAs
• Imaging of current induced Néel vector switching in antiferromagnetic Mn${}_2$Au
• Current induced switching in Mn2Au from first principles

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• Reversing Neel Vector in PT-Antiferromagnets by Nonreciprocal Light Scattering
• Electric Current Control of Helimagnetic Chirality from a Multidomain State in the Helimagnet MnAu${}_2$