Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Abstract

Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.

arXiv comment9 pages, 9 figures

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• Coupling of ferromagnetic and antiferromagnetic spin dynamics in Mn${}_2$Au/NiFe thin-film bilayers
• Fresnel diffraction imaging of surface nanostructure using coherent resonant X-ray scattering
• Identifying Switching of Antiferromagnets by Spin-Orbit Torques
• Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr${}_2$O${}_3$ thin films
• Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device
• Reversing Neel Vector in PT-Antiferromagnets by Nonreciprocal Light Scattering
• Electric Current Control of Helimagnetic Chirality from a Multidomain State in the Helimagnet MnAu${}_2$