Cr${}_3$X${}_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve

Abstract

Two-dimensional ferromagnetic (FM) half-metals are promising candidates for advanced spintronic devices with small-size and high-capacity. Motivated by recent report on controlling synthesis of FM Cr${}_3$Te${}_4$ nanosheet, herein, to explore the potential application in spintronics, we designed spintronic devices based on Cr${}_3$X${}_4$ (X=Se, Te) monolayers and investigated their spin transport properties. We found that Cr${}_3$Te${}_4$ monolayer based device shows spin filtering and dual spin diode effect when applying bias voltage, while Cr${}_3$S${}_4$ monolayer is an excellent platform to realize a spin valve. The different transport properties are primarily ascribed to the semiconducting spin channel, which is close to and away from the Fermi level in Cr${}_3$Te${}_4$ and Cr${}_3$Se${}_4$ monolayers, respectively. Interestingly, the current in monolayer Cr${}_3$Se${}_4$ based device also displays a negative differential resistance effect (NDRE) and a high magnetoresistance ratio (up to 2*10${}^3$). Moreover, we found thermally induced spin filtering effect and NDRE in Cr${}_3$Se${}_4$ junction when applying temperature gradient instead of bias voltage. These theoretical findings highlight the potential of Cr${}_3$X${}_4$ (X=Se, Te) monolayers in spintronic applications and put forward realistic materials to realize nanosale spintronic device.

References in corpus (3)

• Spin-wave diode and circulator based on unidirectional coupling
• Control of spin injection by direct current in lateral spin valves
• Spin current noise of the spin Seebeck effect and spin pumping