Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor

Abstract

Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.

References in corpus (7)

• Fermi surface nesting and the origin of Charge Density Waves in metals
• Evidence for an excitonic insulator phase in 1T-TiSe${}_2$
• Classification of Charge Density Waves Based on Their Nature
• Unconventional hysteretic transition in a charge density wave
• Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS2
• Effect of Cu intercalation and pressure on excitonic interaction in 1T-TiSe2
• A Polymeric Planarization Strategy for Versatile Multi-terminal Electrical Transport Studies on Small, Bulk Quantum Materials

Cited by in corpus (5)

• Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3
• Molten flux growth of single crystals of quasi-1D hexagonal chalcogenide BaTiS3
• Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order
• A system built for both deterministic transfer processes and contact photolithography
• Electrical contacts for high performance optoelectronic devices of BaZrS3 single crystals