Temperature-dependent dielectric function of intrinsic silicon: Analytic models and atom-surface potentials
arXiv:2207.11599 · doi:10.1103/PhysRevB.106.045202
Abstract
The optical properties of monocrystalline, intrinsic silicon are of interest for technological applications as well as fundamental studies of atom-surface interactions. For an enhanced understanding, it is of great interest to explore analytic models which are able to fit the experimentally determined dielectric function , over a wide range of frequencies and a wide range of the temperature parameter , where represents room temperature. Here, we find that a convenient functional form for the fitting of the dielectric function of silicon involves a Lorentz-Dirac curve with a complex, frequency-dependent amplitude parameter, which describes radiation reaction. We apply this functional form to the expression , inspired by the Clausius-Mossotti relation. With a very limited set of fitting parameters, we are able to represent, to excellent accuracy, experimental data in the (angular) frequency range and , corresponding to the temperature range . Using our approach, we evaluate the short-range and the long-range coefficients for the interaction of helium atoms with the silicon surface. In order to validate our results, we compare to a separate temperature-dependent direct fit of to the Lorentz-Dirac model.
arXiv comment18 pages, 9 figures, Version published in PRB
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