Anderson localization crossover in 2D Si systems: The past and the present

Abstract

Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical density ($n_{\mathrm{c}}$), critical resistance (${\rho }_{\mathrm{c}}$), and sample quality defined by the effective impurity density (as experimentally diagnosed by the sample mobility, ${\mu }_{\mathrm{m}}$, at densities much higher than critical densities). Our results unify experimental results for 2D metal-insulator transitions (MIT) in Si systems over a 50-year period (1970-2020), showing that $n_{\mathrm{c}}$ (${\rho }_{\mathrm{c}}$) decrease (increase) with increasing sample quality, explaining why the early experiments in the 1970s, using low-quality samples (${\mu }_{\mathrm{m}}\sim 10^3{\mathrm{cm}}^2/Vs$) reported strong localization crossover at $n_c\sim 10^{12}{\mathrm{cm}}^{-2}$ with ${\rho }_c\sim 10^3\Omega$ whereas recent experiments (after 1995), using high-quality samples (${\mu }_{\mathrm{m}}>10^4{\mathrm{cm}}^2/Vs$), report $n_c\sim 10^{11}{\mathrm{cm}}^{-2}$ with ${\rho }_c>10^4\Omega$. Our theory establishes the 2D MIT to be primarily a screened Coulomb disorder-driven strong localization crossover phenomenon, which happens at different sample-dependent critical density and critical resistance, thus unifying Si 2D MIT phenomena over a 50-year period.

5 pages, 1 figure

References in corpus (3)

• The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
• Mobility versus quality in 2D semiconductor structures
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs