paper

Mottness in two-dimensional van der Waals NbX monolayers (X=Cl, Br, and I)

arXiv:2207.01471 · doi:10.1103/PhysRevB.107.035126

Abstract

We investigate strong electron-electron correlation effects on 2-dimensional van der Waals materials NbX (X=Cl, Br, I). We find that the monolayers NbX are ideal systems close to the strong correlation limit. They can be described by a half-filled single band Hubbard model in which the ratio between the Hubbard, U, and the bandwidth, W, U/W 5 10. Both Mott and magnetic transitions of the material are calculated by the slave boson mean field theory. Doping the Mott state, a superconducting pairing instability is found. We also construct a tunable bilayer Hubbard system for two sliding NbX layers. The bilayer system displays a crossover between the band insulator and Mott insulator.

10 pages, 6 figures in the main text, and 4 pages, 2 figures in the supplemental material

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