Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate
arXiv:2206.10842 · doi:10.1088/2053-1583/acbdaa
Abstract
Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the substrate materials on the unaligned channel materials are much less explored. In this work, we report the realization of superlattice multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a ~0.14° twisted double-layer boron nitride (tBN) substrate. Transport measurements reveal the emergence of three pairs of superlattice Dirac points around the pristine Dirac cone, featuring multiple metallic or insulating states surrounding the charge neutrality point (CNP). Displacement field tunable and electron-hole asymmetric Fermi velocities are indicated from temperature dependent measurements, along with the gapless dispersion of superlattice Dirac cones. The experimental observation of multiple Dirac cones in MLG/tBN heterostructure is supported by band structure calculations employing periodic moiré potential. Our results unveil the potential of using twisted substrate as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientations, which might pave the way for a new branch of twistronics.
13 pages, 4 figures
References in corpus (15)
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Stacking-engineered ferroelectricity in bilayer boron nitride
- Tunable Phase Boundaries and Ultra-Strong Coupling Superconductivity in Mirror Symmetric Magic-Angle Trilayer Graphene
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Interfacial Ferroelectricity by van-der-Waals Sliding
- Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
- Electric field tunable unconventional superconductivity in alternating twist magic-angle trilayer graphene
- New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
- Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride
- Twist engineering of the two-dimensional magnetism in double bilayer chromium triiodide homostructures
- Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
- Superconducting Quantum Interference in Twisted van der Waals Heterostructures
- Superposition of intra- and inter-layer excitons in twistronic MoSe/WSe bilayers probed by resonant Raman scattering
- High-order minibands and interband Landau level reconstruction in graphene moire superlattice