Absolute Quantification of sp${}^3$ Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy

Abstract

The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp${}^3$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp${}^3$ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G${}^{+}$ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp${}^3$ defect densities in (6,5) SWCNTs with an error of $\pm$ 3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent and nanotube length.

References in corpus (3)

• Luminescent Defects in Single-Walled Carbon Nanotubes for Applications
• Charge Transport in and Electroluminescence from sp${}^3$-Functionalized Carbon Nanotube Networks
• Interaction of Luminescent Defects in Carbon Nanotubes with Covalently Attached Stable Organic Radicals

Cited by in corpus (6)

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• Near-Intrinsic Photo- and Electroluminescence from Single-Walled Carbon Nanotube Thin Films on BCB-Passivated Surfaces
• Photo-Activated, Solid-State Introduction of Luminescent Oxygen Defects into Semiconducting Single-Walled Carbon Nanotubes
• Tuning Electroluminescence from Functionalized SWCNT Networks further into the Near-Infrared