Modified interlayer stacking and insulator to correlated-metal transition driven by uniaxial strain in 1$T$-TaS${}_2$

Abstract

Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS${}_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain engineering on the electronic structure and interlayer coupling in 1$T$-TaS${}_2$ . The normally insulating ground state is transformed into a correlated-metal phase under strain, as evidenced by the emergence of a narrow band at the Fermi level. Temperature dependent ARPES measurements reveal that the metallic behaviour only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band-insulator in unstrained samples. Electronic structure calculations demonstrate that the correlated metallic behaviour is stabilized by a previously predicted but unobserved bulk stacking structure with a modified interlayer coupling of the Ta d${}_{z^2}$ electrons. Our combined approach lays bare the role of correlations and interlayer coupling in 1$T$-TaS${}_2$ , providing critical input for understanding superconductivity under pressure and the metastable hidden phase induced using non-equilibrium protocols in this platform material for correlated physics.

Combined main article and supplementary information

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Cited by in corpus (4)

• Interlayer Hopping between Surface Mott Insulator and Bulk Band Insulator in layered 1T-TaS_{2}
• Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS2
• Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS${}_2$
• Nonvolatile optical control of interlayer stacking order in 1T-TaS2