Modified interlayer stacking and insulator to correlated-metal transition driven by uniaxial strain in 1$T$-TaS${}_2$

Abstract

Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS${}_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain engineering on the electronic structure and interlayer coupling in 1$T$-TaS${}_2$ . The normally insulating ground state is transformed into a correlated-metal phase under strain, as evidenced by the emergence of a narrow band at the Fermi level. Temperature dependent ARPES measurements reveal that the metallic behaviour only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band-insulator in unstrained samples. Electronic structure calculations demonstrate that the correlated metallic behaviour is stabilized by a previously predicted but unobserved bulk stacking structure with a modified interlayer coupling of the Ta d${}_{z^2}$ electrons. Our combined approach lays bare the role of correlations and interlayer coupling in 1$T$-TaS${}_2$ , providing critical input for understanding superconductivity under pressure and the metastable hidden phase induced using non-equilibrium protocols in this platform material for correlated physics.

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References in corpus (38)

• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
• Tuning superconductivity in twisted bilayer graphene
• Ultrafast switching to a stable hidden topologically protected quantum state in an electronic crystal
• Flat bands and Wigner crystallization in the honeycomb optical lattice
• Orbital textures and charge density waves in transition metal dichalcogenides
• Strong Peak in $T_c$ of Sr${}_2$RuO${}_4$ Under Uniaxial Pressure
• Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
• Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2
• Band insulator to Mott insulator transition in 1T-TaS${}_2$
• Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
• Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
• A new high-temperature quantum spin liquid with polaron spins
• Piezoelectric-based apparatus for strain tuning
• Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
• Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS2
• Split superconducting and time-reversal symmetry-breaking transitions, and magnetic order in Sr${}_2$RuO${}_4$ under uniaxial stress
• Disrupted orbital order and the pseudo-gap in layered 1T-TaS${}_2$
• Superconducting Transitions in Flat Band Systems
• Collapse of layer dimerization in the photo-induced hidden state of 1T-TaS2
• Charge order landscape and competition with superconductivity in kagome metals
• Beyond the molecular movie: dynamics of bands and bonds during a photo-induced phase transition
• Direct Observation of a Uniaxial Stress-driven Lifshitz Transition in Sr${}_2$RuO${}_4$
• Temperature-driven reorganization of electronic order in CsV${}_3$Sb${}_5$
• In-situ strain-tuning of the metal-insulator-transition of Ca${}_2$RuO${}_4$ in angle-resolved photoemission experiments
• Coexistence of Tri-Hexagonal and Star-of-David Pattern in the Charge Density Wave of the Kagome Superconductor AV${}_3$Sb${}_5$
• Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2
• Distinguishing a Mott Insulator from a Trivial Insulator with Atomic Adsorbates
• Pressure dependence of the charge density wave in 1T-TaS2 and its relation to superconductivity
• Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of $1T$-TaS${}_2$
• Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2
• Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe${}_2$
• Effect of Stacking Order on the Electronic State of 1T-TaS${}_2$
• Possible strain induced Mott gap collapse in 1T-TaS${}_2$
• Mott versus hybridization gap in the low-temperature phase of $1T$-TaS${}_2$
• Uniaxial Pressure Induced Stripe Order Rotation in La${}_{1.88}$Sr${}_{0.12}$CuO${}_4$
• $\text{Ab initio}$ theory of magnetism in two-dimensional $1T$-TaS${}_2$
• Reconcile the Bulk Metallic and Surface Insulating state in 1T-TaSe${}_2$

Cited by in corpus (4)

• Interlayer Hopping between Surface Mott Insulator and Bulk Band Insulator in layered 1T-TaS_{2}
• Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS2
• Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS${}_2$
• Nonvolatile optical control of interlayer stacking order in 1T-TaS2