Influence of misfit strain on the physical properties of Fe thin films

Abstract

We investigate the growth of thin Fe layers on MgAl${}_2$O${}_4$~(001) and MgO~(001) substrates using dc magnetron sputtering. The crystal quality of Fe layers deposited on MgAl${}_2$O${}_4$ is found to be substantially higher as compared to Fe grown on MgO substrates. The effects of the crystal quality on the magnetic and electronic transport properties are discussed.

arXiv comment8 pages, 6 figures

References in corpus (5)

• Conductivity-Like Gilbert Damping due to Intraband Scattering in Epitaxial Iron
• A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions
• Modification of spintronic terahertz emitter performance through defect engineering
• Large perpendicular magnetic anisotropy in epitaxial Fe/MgAl2O4(001) heterostructures
• Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

Cited by in corpus (3)

• The effect of iron layer thickness on the interlayer exchange coupling in Fe/MgO (001) superlattices
• Boundary-induced phase in epitaxial iron layers
• Epitaxy enhancement in oxide/tungsten heterostructures by harnessing the interface adhesion