Engineering spin-orbit effects and Berry curvature by deposition of Eu on WSe${}_2$

Abstract

Motivated by recent progress in 2D spintronics, we present Eu deposited on a 1H-WSe${}_2$ as a promising platform for engineering spin-orbit effects and Berry curvature. By first-principles calculations based on density functional theory, we show that Eu/WSe${}_2$ exhibits intriguing properties such as high magnetic anisotropy, valley-dependent polarization of spin and orbital angular momenta, and their Rashba textures. These originate from magnetic and spin-orbit proximity effects at the interface and the interplay between localized $4f$ magnetic moments of Eu and mobile charge carriers of WSe${}_2$. We find a pronounced anomalous Hall effect in the proposed system. Thus, we promote $4f$ rare-earth metals deposited on top of a transition-metal dichalcogenides as a promising platform for 2D spintronics.

8 pages, 7 figures

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• The Valley Hall Effect in MoS2 Transistors
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Cited by in corpus (2)

• Promoting $p$-based Hall effects by $p$-$d$-$f$ hybridization in Gd-based dichalcogenides
• Ab-initio exploration of Gd monolayer interfaced with WSe${}_2$: from electronic and magnetic properties to the anomalous Hall effect