Effects of external pressure on the narrow gap semiconductor CeCdAs
arXiv:2203.10049 · doi:10.1103/PhysRevB.105.094443
Abstract
Here we report the magnetic and electronic properties of recently discovered CeCdAs. At ambient pressure, CeCdAs presents a semiconducting behavior with an activation gap of 74(1)~meV. At 136~K, a sudden increase of the electrical resistivity and a peak in specific heat are consistent with a charge density wave transition. At low temperatures, antiferromagnetic order of the Ce ions occurs below ~K with a magnetic hard axis along the -axis and a doublet ground state. The application of external pressure strongly suppresses the charge density wave order, which is completely suppressed above 0.8(1)~GPa, and induces a metallic ground state. No evidence for superconductivity is detected above 2~K. Conversely, the antiferromagnetic state is favored by pressure, reaching a transition temperature of 5.3~K at 3.8(1)~GPa. Notably, the resistivity anomaly characterizing the antiferromagnetic order changes with increasing pressure, indicating that two different magnetic phases might be present in CeCdAs under pressure. This change in ordering appears to be associated to the crossing of the and lines.
References in corpus (6)
- Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal
- Evolution of charge density wave order and superconductivity under pressure in LaPtSi
- Robust narrow-gap semiconducting behavior in square-net LaCdAs
- Electronic and magnetic properties of stoichiometric CeAuBi
- Pressure effects on the heavy-fermion antiferromagnet CeAuSb2
- Topological Magnetic Hysteresis in Single Crystals of CeAgSb2 Ferromagnet