Effects of external pressure on the narrow gap semiconductor Ce$_{3}$Cd$_{2}$As$_{6}$

M. M. Piva; L. Xiang; J. D. Thompson; S. L. Bud'ko; R. A. Ribeiro; P. C. Canfield; P. F. S. Rosa

doi:10.1103/PhysRevB.105.094443

paper

Effects of external pressure on the narrow gap semiconductor Ce $_{3}$ Cd $_{2}$ As $_{6}$

arXiv:2203.10049 · doi:10.1103/PhysRevB.105.094443

Abstract

Here we report the magnetic and electronic properties of recently discovered Ce $_{3}$ Cd $_{2}$ As $_{6}$ . At ambient pressure, Ce $_{3}$ Cd $_{2}$ As $_{6}$ presents a semiconducting behavior with an activation gap of 74(1)~meV. At 136~K, a sudden increase of the electrical resistivity and a peak in specific heat are consistent with a charge density wave transition. At low temperatures, antiferromagnetic order of the Ce $^{3 +}$ ions occurs below $T_{N} = 4.0$ ~K with a magnetic hard axis along the $c$ -axis and a $Γ_{6} = ∣ \pm 1/2 ⟩$ doublet ground state. The application of external pressure strongly suppresses the charge density wave order, which is completely suppressed above 0.8(1)~GPa, and induces a metallic ground state. No evidence for superconductivity is detected above 2~K. Conversely, the antiferromagnetic state is favored by pressure, reaching a transition temperature of 5.3~K at 3.8(1)~GPa. Notably, the resistivity anomaly characterizing the antiferromagnetic order changes with increasing pressure, indicating that two different magnetic phases might be present in Ce $_{3}$ Cd $_{2}$ As $_{6}$ under pressure. This change in ordering appears to be associated to the crossing of the $T_{CDW}$ and $T_{N}$ lines.

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Antiferromagnetism of CeCd $_{0.67}$ As $_{2}$ existing deep inside the narrow gap semiconducting state

Effects of external pressure on the narrow gap semiconductor Ce3​Cd2​As6​

Abstract

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Effects of external pressure on the narrow gap semiconductor Ce $_{3}$ Cd $_{2}$ As $_{6}$