Numerical package for QFT calculations of defect-induced phenomena in graphene
arXiv:2203.05741 · doi:10.1088/1361-648X/aca002
Abstract
We introduce a computationally efficient method based on the path integral formalism to describe defect-modified graphene. By taking into account the entire Brillouin zone, our approach respects the lattice symmetry and can be used to investigate both short-range and long-range effects. The proposed method's key advantage is that the computational complexity does not increase with the system size, scaling, instead, with the number of defects. As a demonstration of our method, we explore the graphene-mediated RKKY interaction between multiple magnetic impurities. Our results concur with earlier findings by showing that the interaction strength and sign depend on various factors like impurity separation, sublattice arrangement, and system doping. We demonstrate that frustration can be introduced between the impurity spins by controlling their relative positions and that this frustration can be switched on and off by tuning the chemical potential of the system.
10 pages, uses minted.sty
References in corpus (16)
- Magnetism in Graphene Induced by Single-Atom Defects
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Atomic-scale control of graphene magnetism using hydrogen atoms
- The Coulomb impurity problem in graphene
- Vacuum Polarization and Screening of Supercritical Impurities in Graphene
- Localized Magnetic States in Graphene
- RKKY in half-filled bipartite lattices: graphene as an example
- Atomic Collapse and Quasi-Rydberg States in Graphene
- RKKY Interaction in Graphene from Lattice Green's Function
- Long-Range Interaction Between Adatoms in Graphene
- Supercritical Coulomb Impurities in Gapped Graphene
- Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations
- Adsorption of Hydrogen in Graphene without Band Gap Opening at the Dirac Point
- Copper adatoms on graphene: theory of orbital and spin-orbital effects
- RKKY Interactions in Graphene: Dependence on Disorder and Gate Voltage
- Long-range exchange interaction between magnetic impurities in graphene