Integrated optical quantum memory controlled by electro-optic effect
arXiv:2203.03887 · doi:10.1103/PhysRevA.108.012614
Abstract
Integrated optical quantum memories are a scalable solution to synchronize a large number of quantum nodes. Without compact quantum memories, some astonishing quantum applications such as distributed quantum computing and quantum sensor networks would not be possible. Rather than find a specific material that meets all the requirements of an on-chip quantum memory as other protocols usually do, we propose to assign the memory requirements on coherent storage and controllability to rare earth ions and a lithium niobate crystal, respectively. Specifically, optical quantum states are stored in an erbium-doped lithium niobate micro-cavity by utilizing the electro-optic effect of lithium niobate. The cavity frequency can be shifted by an external electric field, thus modifying the resonance condition between the cavity and the collective atomic excitation. This effect is further used to suppress or enhance the emission of photon echoes. Our calculated results show that high efficiency and low noise performance is achievable.
References in corpus (11)
- Supplementary information for "Quantum supremacy using a programmable superconducting processor"
- A Single-Atom Quantum Memory
- Towards a global quantum network
- Complete universal quantum gate set approaching fault-tolerant thresholds with superconducting qubits
- Coherent spin control at the quantum level in an ensemble-based optical memory
- Cavity-enhanced quantum network nodes
- Elimination of Noise in Optically Rephased Photon Echoes
- On-chip electro-optic tuning of a lithium niobate microresonator with integrated in-plane microelectrodes
- Reliable coherent optical memory based on a laser-written waveguide
- Controlled Stark shifts in Er-doped crystalline and amorphous waveguides for quantum state storage
- Spin echo silencing using a current-biased frequency-tunable resonator