Strain effect on Goos-Hänchen shifts and group delay time in gapped graphene barrier
arXiv:2201.06992 · doi:10.1016/j.physleta.2022.128136
Abstract
We investigate the strain effect on the Goos-Hänchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the transmission probabilities together with the GH shifts and group delay time. Our results show that the two last quantities are strongly depending to weather the strain is applied along armchair or zigzag directions. In particular it found that both of quantities can be enhanced with the applied strain.
7 pages, 7 figures
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- A tight-binding approach to uniaxial strain in graphene
- Spin transport in proximity induced ferromagnetic graphene
- Nonlinear elasticity of monolayer graphene
- Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier
- Superluminal pulse reflection from a weakly absorbing dielectric slab