Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime

Abstract

To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we used the phonon Monte Carlo (MC) method with the phonon dispersion of various typical WBG semiconductors, including GaN, SiC, AlN, and \ce{β-Ga_2O_3}, to investigate the thermal spreading resistance in a ballistic-diffusive regime. It was found that when compared with Fourier's law-based predictions, the increase in the thermal resistance caused by ballistic effects was strongly related to different phonon dispersions. Based on the model deduced under the gray-medium approximation and the results of dispersion MC, we obtained a thermal resistance model that can well address the issues of thermal spreading and ballistic effects, and the influences of phonon dispersion. The model can be easily coupled with FEM based thermal analysis and applied to different materials. This paper can provide a clearer understanding of the influences of phonon dispersion on the thermal transport process, and it can be useful for the prediction of junction temperatures and the development of thermal management strategies for WBG semiconductor devices.

References in corpus (4)

• Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide
• Calculation of nanowire thermal conductivity using complete phonon dispersion relations
• Phonon thermal transport properties of GaN with symmetry-breaking and lattice deformation induced by the electric field
• On the upper limit of thermal conductivity GaN crystals

Cited by in corpus (3)

• Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations
• Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices
• Nonlocality and Strength of Interatomic Interactions Inducing the Topological Phonon Phase Transition