Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond

Abstract

The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and mapping current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial mapping. Here we use near-surface nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in pre-development. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to about $\approx 10\mu A/\mu {\mathrm{m}}^2$ and sub-micron spatial resolution at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Our method provides, therefore a decisive step toward three-dimensional current mapping in technologically relevant nanoscale electronics chips.

Featured in Parker, M., Imaging circuits in three dimensions. Nat Electron 7, 94 (2024)

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Cited by in corpus (8)

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• Towards high spatial resolution magnetic imaging with a compact practical quantum diamond microscope
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• Continuous drive heterodyne microwave sensing with spin qubits in hexagonal boron nitride
• Efficient Detection of Statistical RF Fields at High Magnetic Field with a Quantum Sensor
• High-Resolution Atomic Magnetometer-Based Imaging of Integrated Circuits and Batteries
• Bias-field-free operation of nitrogen-vacancy ensembles in diamond for accurate vector magnetometry
• Sensing Electric Currents in an a-IGZO TFT-Based Circuit Using a Quantum Diamond Microscope