Cu doping effects on the electronic structure of Fe1-xCuxSe

Abstract

Using angle-resolved photoemission spectroscopy (ARPES), we studied the evolution of the electronic structure of Fe1-xCuxSe from x = 0 to 0.10. We found that the Cu dopant introduces extra electron carriers. The hole bands near the gamma point are observed to steadily shift downward with increasing doping and completely sink down below the Fermi level (EF) for x > 0.05. Meanwhile, the electron pocket near the M point becomes larger but loses the spectral weight near EF. We also observed that effective mass of the electron band near the M point increases with doping. Our result explains why superconductivity disappears and metal insulator transition (MIT) like behavior occurs upon Cu doping in terms of electronic structure, and provide insight into emergent magnetic fluctuation in Fe1-xCuxSe.

References in corpus (12)

• High-temperature superconductivity in iron-based materials
• Electronic structure of quantum materials studied by angle-resolved photoemission spectroscopy
• Heavily electron-doped electronic structure and isotropic superconducting gap in AxFe2Se2 (A=K,Cs)
• Substitution Effects on FeSe Superconductor
• Crystal structure of the new FeSe1-x superconductor
• Iron based high transition temperature superconductors
• Tuning the Charge Density Wave and Superconductivity in CuxTaS2
• Dependence of carrier doping on the impurity potential in transition-metal-substituted FeAs-based superconductors
• Unidirectional spin density wave state in metallic (Sr1-xLax)2IrO4
• Ultrafast nematic-orbital excitation in FeSe
• NaFe${}_{0.56}$Cu${}_{0.44}$As: A pnictide insulating phase induced by on-site Coulomb interaction
• Strong similarities between the local electronic structure of insulating iron pnictide and lightly doped cuprate

Cited by in corpus (1)

• Robust superconductivity and fragile magnetism induced by the strong Cu impurity scattering in the high-pressure phase of FeSe