Single-dopant band bending fluctuations in MoSe measured with electrostatic force microscopy
arXiv:2109.15275 · doi:10.1103/PhysRevLett.130.058204
Abstract
In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe sample. We show that noise in this device is intrinsically bias-dependent due to the bias-dependent surface potential, and does not require that the frequency or magnitude of individual dopant fluctuations are themselves bias-dependent. Finally, we measure spatial nonhomogeneities in band bending (charge reorganization) timescales.
arXiv comment6 main text pages, 8 supplemetary pages, 11 figures
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