Raman spectra and infrared intensities of graphene-like clusters in compared to epitaxial graphene on Si

Abstract

There are several growing methods for graphene. In this study, the growth of graphene-like clusters on the SiC wafers is done by annealing the wafers in a vacuum evaporation system equipped with a heating source accessory. For evaluating the quality of the growth method, the Raman spectra and infrared intensities of graphene-like clusters are studied theoretically and experimentally. For doing the theoretical study, three types of graphene clusters are considered and their Raman spectrum and infrared intensities are found using the Hartree-Fock method. The results show that the geometry of the cluster, and in consequence the geometry-dependent high (low) non-uniformity of charge distribution on the cluster surfaces causes the high (low) infrared intensities. The experimental spectrums are measured and compared with the theoretical ones. An agreement was seen between the experimental and theoretical Raman spectrum when the wave number is less than 1700 Cm-1. It is shown that more accurate temperature control and higher vacuum level of the chamber are essential for using the physical evaporation method for growing the single-layer graphene on the SiC substrate.

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• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Raman spectroscopy of epitaxial graphene on a SiC substrate
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