Magnetic avalanche of non-oxide conductive domain walls
arXiv:2105.09659 · doi:10.1038/s41467-021-24160-2
Abstract
Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been exclusively observed in oxides, where DW mobility and conductivity is largely influenced by stoichiometry and defects. In contrast, we here report on conductive DWs in the non-oxide ferroelectric GaVS, where charge carriers are provided intrinsically by multivalent V molecular clusters. We show that this new mechanism gives rise to DWs composed of nanoscale stripes with alternating electron and hole conduction, unimaginable in oxides. By exerting magnetic control on these segments we promote the mobile and effectively 2D DWs into dominating the 3D conductance, triggering abrupt conductance changes as large as eight orders of magnitude. The flexible valency, as origin of these novel hybrid DWs with giant conductivity, demonstrates that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.
8 pages, 4 figures
References in corpus (8)
- Strain gradient induced polarization in SrTiO3 single crystals
- Conduction at domain walls in insulating Pb(ZrTi)O thin films
- Characteristics of ferroelectric-ferroelastic domains in N{é}el-type skyrmion host GaVS
- Possible emergence of a skyrmion phase in ferroelectric GaMoS
- Thermodynamic Properties of Ferromagnetic Mott- Insulators GaV4S8
- Architecture of nanoscale ferroelectric domains in GaMo4S8
- Lattice dynamics and electronic excitations in a large family of lacunar spinels with a breathing pyrochlore lattice structure
- Magnetic phase transitions and spin density distribution in the molecular multiferroic GaVS system