A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y${}_2$SiO${}_5$ doped with Sm${}^{3+}$

Abstract

We present the full magnetic g tensors of the ${}^6$H${}_{5/2}$Z${}_1$ and ${}^4$G${}_{5/2}$A${}_1$ electronic states for both crystallographic sites in Sm${}^{3+}$:Y${}_2$SiO${}_5$, deduced through the use of Raman heterodyne spectroscopy performed along 9 different crystallographic directions. The maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited state. The determination of these g tensors provide essential spin Hamiltonian parameters that can be utilized in future magnetic and hyperfine studies of Sm${}^{3+}$:Y${}_2$SiO${}_5$, with applications in quantum information storage and communication devices.

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Cited by in corpus (2)

• Prediction of the Optical Polarization and High Field Hyperfine Structure Via a Parametrized Crystal-Field Model for the Low Symmetry Centers in Er${}^{3+}$ Doped Y${}_2$SiO${}_5$
• Reproduction of the electronic and magnetic structure of the low symmetry sites of Y${}_2$SiO${}_5$ doped with Sm${}^{3+}$ via a parameterized crystal-field model