Controlling the electronic interface properties of AlO${}_x$/SrTiO${}_3$ heterostructures

Abstract

Depositing disordered Al on top of SrTiO${}_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO${}_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO${}_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

9 pages, 5 figures