Publications (7)
Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
Michael Zapf, Matthias Schmitt, Judith Gabel +18
Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properti…
Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
Judith Gabel, Matthias Pickem, Philipp Scheiderer +12
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commo…
Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator
Philipp Scheiderer, Matthias Schmitt, Judith Gabel +7
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons.…
Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing
Soumen Pradhan, Kirill Miller, Fabian Hartmann +9
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI,…
Design and realization of topological Dirac fermions on a triangular lattice
Maximilian Bauernfeind, Jonas Erhardt, Philipp Eck +8
Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band orderin…
Controlling the electronic interface properties of AlO/SrTiO heterostructures
Berengar Leikert, Judith Gabel, Matthias Schmitt +6
Depositing disordered Al on top of SrTiO is a cheap and easy way to create a two-dimensional electron system in the SrTiO surface layers. To facilitate future device applic…
Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
Patrick Maier, Fabian Hartmann, Judith Gabel +8
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gat…