Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP single-photon avalanche diodes
arXiv:2104.03919 · doi:10.1109/JQE.2022.3171671
Abstract
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating and active reset. We have shown when such solutions are beneficial from the key distribution point of view and enough to use a simple scheme with a snatching comparator. We have also proposed a precise method for measuring the afterpulse and presented a model describing the non-markovian dynamic of this effect. We have demonstrated that our afterpulsing measurement approach makes these measurements less dependent on the parameters of the flow of the diode and the laser pulses power changes, in contrast to the other methods considered in this paper.
References in corpus (8)
- Sending-or-Not-Sending with Independent Lasers: Secure Twin-Field Quantum Key Distribution Over 509 km
- High speed single photon detection in the near-infrared
- Superconducting Nanowire Single-Photon Detectors for Quantum Information
- Detecting Infrared Single Photons with Near-Unity System Detection Efficiency
- Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes
- InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm
- Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550 nm with an Active Quenching ASIC
- 2.23 GHz gating InGaAs/InP single-photon avalanche diode for quantum key distribution