Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr${}_3$

Abstract

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr${}_3$, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.

11 pages (main manuscript + SI), 12 figures (5 in manuscript, 7 in SI)

References in corpus (2)

• Colossal negative magnetoresistance in dilute fluorinated graphene
• Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Cited by in corpus (2)

• Noncollinear electric dipoles in a polar, chiral phase of CsSnBr${}_3$ perovskite
• Extraordinary Phase Coherence Length in Epitaxial Halide Perovskites