Engineering tunable strain fields in suspended graphene by microelectromechanical systems
arXiv:2103.13652 · doi:10.1109/TRANSDUCERS.2019.8808807
Abstract
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.
arXiv comment5 pages, 6 figures, conference proceeding
References in corpus (8)
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Tailoring mechanically-tunable strain fields in graphene
- Superconducting States in pseudo-Landau Levels of Strained Graphene
- Fabrication of comb-drive actuators for straining nanostructured suspended graphene