An analytical model for electronic noise in a cryogenic bolometer detector readout circuit

Abstract

This paper presents an analytical model to quantify the measured noise in a cryogenic bolometer readout circuit. The model includes the contributions from the bias resistors and sensor resistors, voltage and current noise of amplifier, and cable capacitance. The model parameters are empirically estimated using frequency domain analysis of the measured noise data of indigenously developed Neutron Transmutation Doped (NTD) Ge sensors. The model is shown to describe noise data for NTD Ge sensors over a wide range of resistances corresponding to temperatures in the range 20 - 70 mK. Relative contributions of different components are discussed and it is shown that the contribution to the overall noise from the differential amplifier at 300 K is the dominant source. It is observed that the amplifier flicker noise is significantly lower than that specified in the amplifier datasheet. The present study also indicates that a desirable value of resistance of NTD sensor (R${}_{NTD}$) from noise considerations is $\le$ 1 G$\Omega$ at $sim$ 20 mK.

Replaced the existing time domain analysis with frequency domain analysis as that is a better representation of noise data. The older manuscript included work done on NTD Ge sensors only, while the replacement manuscript has work done on NTD and SMD sensors both with the results verifed over a wider range of resistance for NTD Ge sensors

References in corpus (4)

• Neutrino Mass Ordering from Oscillations and Beyond: 2018 Status and Future Prospects
• An active noise cancellation technique for the CUORE Pulse Tube Cryocoolers
• Atomic resolution STM in a cryogen free dilution refrigerator at 15 mK
• Study of the effect of external noise pickups on the performance of a cryogenic bolometer