Long-lived electron spin coherence in Ga-doped crystals at room temperature
arXiv:2103.01673 · doi:10.1103/PhysRevB.103.L140411
Abstract
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns at room temperature. Through the dependence measurements of laser wavelength and temperature, the room-temperature long-lived spin signal is attributed to localized electrons. The spin dephasing (relaxation) processes are independent of transverse (longitudinal) magnetic fields, indicating the spin dephasing not resulting from the g-factor inhomogeneity and electron-nuclear hyperfine interaction. It reveals that the two spin dephasing processes originate from two types of localized electrons, both of which are dominated by the anisotropic exchange Dzyaloshinskii-Moriya interaction between adjacent localized electrons.
References in corpus (13)
- Electron spin relaxation by nuclei in semiconductor quantum dots
- Phonon-induced decay of the electron spin in quantum dots
- Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures
- Room temperature spin coherence in ZnO
- Spin relaxation of localized electrons in n-type semiconductors
- Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n-type GaAs
- Spin relaxation and antisymmetric exchange in n-doped III-V semiconductor
- Theory of Electron Spin Relaxation in ZnO
- Theory of Optical Orientation in n-Type Semiconductors
- Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
- Spin noise spectroscopy of donor bound electrons in ZnO
- Electron charge and spin delocalization revealed in the optically probed longitudinal and transverse spin dynamics in -GaAs
- Unambiguous determination of spin dephasing times in ZnO