Theory of the $sp-d$ coupling of transition metal impurities with free carriers in ZnO

Abstract

The $s,p-d$ exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The $+U$ corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The $p-d$ coupling reveals unexpectedly complex features. In particular, (i) the $p-d$ coupling constants $N_0\beta$ vary about 10 times when going from V to Cu, (ii) not only the value but also the sign of $N_0\beta$ depends on the charge state of the dopant, (iii) the $p-d$ coupling with the heavy holes and the light holes is not the same; in the case of Fe, Co and Ni, $N_0\beta$s for the two subbands can differ twice, and for Cu the opposite sign of the coupling is found for light and heavy holes. The main features of the $p-d$ coupling are determined by the $p-d$ hybridization between the $d$(TM) and $p$(O) orbitals. In contrast, the $s-d$ coupling constant $N_0\alpha$ is almost the same for all TM ions, and does not depend on the charge state of the dopant. The TM-induced spin polarization of the $p$(O) orbitals contributes to the $s-d$ coupling, enhancing $N_0\alpha$.

16 pages, 11 figures, 1 table

References in corpus (3)

• Effect of the s,p-d exchange interaction on the excitons in (Zn,Co)O epilayers
• Hole states in wide band-gap diluted magnetic semiconductors and oxides
• Green luminescence and calculated optical properties of Cu ions in ZnO