Microscopic metallic air-bridge arrays for connecting quantum devices

Abstract

We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development.

arXiv comment6 pages, 5 figures; This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing

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Cited by in corpus (7)

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• Observing separate spin and charge Fermi seas in a strongly correlated one-dimensional conductor
• Tantalum airbridges for scalable superconducting quantum processors
• Niobium Air Bridges as Low-Loss Components for Superconducting Quantum Hardware
• Semiconductor nanodevices as a probe of strong electron correlations
• Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality
• Aluminum air bridges for superconducting quantum devices realized using a single step electron-beam lithography process