Temporal characterisation of silicon sensors on Timepix3 ASICs

Abstract

The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8\times 10^{15}1\mathrm{Me}\mathrm{V}{\mathrm{n}}_{\mathrm{eq}}{\mathrm{cm}}^{-2}$. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.

References in corpus (8)

• Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
• Performance of Ultra-Fast Silicon Detectors
• Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities
• A Layman's guide to SUSY GUTs
• LHCb VELO Timepix3 Telescope
• Timing performance of the LHCb VELO Timepix3 Telescope
• Performance of Thin Planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences
• Charge collection properties of prototype sensors for the LHCb VELO upgrade

Cited by in corpus (4)

• Charge and temporal characterisation of silicon sensors using a two-photon absorption laser
• Reconstruction of charged tracks with Timepix4 ASICs
• Spatial resolution and efficiency of prototype sensors for the LHCb VELO Upgrade
• Timing measurements with a 3D silicon sensor on Timepix3 in a 180 GeV/c hadron beam