Thermoelectric properties of armchair phosphorene nanoribbons in the presence of vacancy-induced impurity band

Abstract

Armchair phosphorene nanoribbons (APNRs) are known to be semiconductors with an indirect bandgap. Here, we propose to introduce new states in the gap of APNRs by creating a periodic structure of vacancies (antidots). Based on the tight-binding model, we show that a periodic array of vacancies or nanopores leads to the formation of an impurity band inside the gap region. We first present an analytical expression for the dispersion relation of an impurity band induced by hybridization of bound states associated with each single vacancy defect. Then, we increase the size of vacancy defects to include a bunch of atoms and theoretically investigate the effect of nanopores size and their spacing on electronic band structure, carrier transmission function, and thermoelectric properties. Our analysis of the power generation rate and thermoelectric efficiency of these structures reveals that an ANPR can be used as a superb thermoelectric power generation module.

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Cited by in corpus (3)

• Rigorous analysis of the topologically protected edge states in the quantum spin Hall phase of the armchair ribbon geometry
• Enhanced thermoelectric efficiency of zigzag bilayer phosphorene nanoribbon; edge states engineering
• Line Edge Roughness Effects on the Thermoelectric Properties of Armchair Black Phosphorene Nanoribbons