Stimulated emission depletion spectroscopy of color centers in hexagonal boron nitride

Abstract

We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with in-plane linear polarization. The measurements are compared to Photoluminescence of Excitation (PLE) spectra, that maps the electron-optical-phonon sideband of the excited state. The main qualitative difference is a red-shift in the longitudinal optical phonon peak associated with $E_{1u}$ symmetry at the zone center. We argue that this is consistent with recent findings for a carbon-based line defect with admixture of energetically similar excited states.

References in corpus (25)

• Van der Waals heterostructures
• Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
• Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
• Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
• Three-dimensional direct laser writing inspired by stimulated-emission-depletion microscopy
• Color centers in hexagonal boron nitride monolayers: A group theory and ab-initio analysis
• Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping
• Optical charge state control of spin defects in 4H-SiC
• Photoluminescence and photochemistry of the $V_B^{-}$ defect in hexagonal boron nitride
• Stimulated emission from NV centres in diamond
• Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
• A solid state single photon source with Fourier Transform limited lines at room temperature
• Photodynamics of quantum emitters in hexagonal boron nitride revealed by low temperature spectroscopy
• Super-resolution imaging of quantum emitters in layered materials
• Imaging of optically active defects with nanometer resolution
• Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
• Is a quantum biosensing revolution approaching?
• Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes
• Optical switching of resonance fluorescence from a single germanium vacancy color center in diamond
• Optical switching of defect charge states in 4H-SiC
• Vibrational signatures for the identification of single-photon emitters in hexagonal boron nitride
• Optical control of the charge state of color centers in hexagonal boron nitride
• Phonon sidebands of color centers in hexagonal boron nitride
• Possible nanophotonics applications of the $V_N{N}_B$ defect in hexagonal boron nitride
• Stimulated emission depletion spectroscopy of color centers in hexagonal boron nitride

Cited by in corpus (4)

• Resonant and phonon-assisted ultrafast coherent control of a single hBN color center
• Stimulated emission depletion spectroscopy of color centers in hexagonal boron nitride
• Stimulated Emission Depletion Microscopy with Color Centers in Hexagonal Boron Nitride
• Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation