Chemical composition control at the substrate interface as the key for FeSe thin film growth
arXiv:2012.08039 · doi:10.1021/acsami.1c14451
Abstract
The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition which determine FeSe thin film growth and focuses on the film/substrate interface, the tendency for domain matching epitaxial growth but also the disadvantage of chemical heterogeneity. We propose that homogenization of the substrate surface improves the control of stoichiometry, texture, and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. The controlled interface in FeSe/Fe/MgO demonstrates the proof-of-principle.
arXiv commentSubmitted
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