Atomically sharp domain walls in an antiferromagnet
arXiv:2012.00894 · doi:10.1126/sciadv.abn3535
Abstract
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.
8 pages, 4 figures, Supplementary information
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- Laser-induced Creation of antiferromagnetic 180-degree domains in NiO/Pt bilayers
- Angstrom-Scale Imaging of Magnetization in Antiferromagnetic FeAs via 4D-STEM
- Atomic-Scale Spin-Wave Polarizer Based on a Sharp Antiferromagnetic Domain Wall
- Identifiying the domain wall spin structure in current-induced switching of antiferromagnetic NiO/Pt
- Theory of tensorial magnetic inertia in terahertz spin dynamics
- Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device
- Simulations of magnetic Bragg scattering in transmission electron microscopy
- Chiral edge transport along domain walls in magnetic topological insulator nanoribbons
- Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory