Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
arXiv:2011.09417 · doi:10.1103/PRXQuantum.2.010348
Abstract
The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behaviour of these devices change when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer.
References in corpus (15)
- Coherent control of a single electron spin with electric fields
- Hyperfine interaction in a quantum dot: Non-Markovian electron spin dynamics
- Prospects for Spin-Based Quantum Computing
- Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
- Spin relaxation and decoherence of holes in quantum dots
- Rapid high-fidelity gate-based spin read-out in silicon
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Majorana Fermions in Ge/Si Hole Nanowires
- Hybridization and spin decoherence in heavy-hole quantum dots
- Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
- Spin interactions, relaxation and decoherence in quantum dots
- Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
- First-principles hyperfine tensors for electrons and holes in GaAs and silicon
- Effect of strain on hyperfine-induced hole-spin decoherence in quantum dots
- Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors