Atomic configuration controlled photocurrent in van der Waals homostructures
arXiv:2011.08864 · doi:10.1088/2053-1583/abe762
Abstract
Conventional photocurrents at a p-n junction depend on macroscopic built-in fields and are typically insensitive to the microscopic details of a crystal's atomic configuration. Here we demonstrate how atomic configuration can control photocurrent in van der Waals (vdW) materials. In particular, we find bulk shift photocurrents (SPC) can display a rich (atomic) configuration dependent phenomenology that range from contrasting SPC currents for different stacking arrangements in a vdW homostructure (e.g., AB vs BA stacking) to a strong light polarization dependence for SPC that align with crystallographic axes. Strikingly, we find that SPC in vdW homostructures can be directed by modest strain, yielding sizeable photocurrent magnitudes under unpolarized light irradiation and manifesting even in the absence of p-n junctions. These demonstrate that SPC are intimately linked to how the Bloch wavefunctions are embedded in real space, and enables a new macroscopic transport probe (photocurrent) of lattice-scale registration in vdW materials.
References in corpus (12)
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- The electronic properties of bilayer graphene
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Determination of band alignment in the single layer MoS2/WSe2 heterojunction
- Large and tunable photo-thermoelectric effect in single-layer MoS2
- Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Photoconductivity of biased graphene
- Photonic crystals for nano-light in moiré graphene superlattices
- Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
- Strained bilayer graphene: Band structure topology and Landau level spectrum
- Nano-photocurrent mapping of local electronic structure in twisted bilayer graphene