Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems
arXiv:2010.09160 · doi:10.7566/JPSJ.89.113703
Abstract
In-plane magnetoresistance for organic massless Dirac electron system (OMDES) -(BEDT-TTF)I and -(BEDT-TTF)I in addition to possible candidates of the OMDES -(BETS)I and -(BEDT-STF)I, was investigated under hydrostatic pressure. We have found the universal behavior of the in-plane magnetoresistance under a low magnetic field perpendicular to two-dimensional plane. As for -(BEDT-TTF)I, the universality was examined with the parameters of temperature, magnetic field and its direction. We suggest that the universal magnetoresistance behavior is found even for the gapped state of -(BEDT-TTF)I under intermediate pressure, when the thermal energy exceeds the gap.
11 pages, 4 figures
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Cited by in corpus (4)
- Pressure-induced phase switching of the Shubnikov de Haas oscillations in molecular Dirac fermion system (BETS)I
- Observations of Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System -(BETS)I under Pressure
- Anomalous Phase-Coherence Scaling in a Quantum-Critical Dirac Semimetal
- Ambient-Pressure Organic Dirac Electron State in -(BETS)AuCl