paper

Pressure-induced phase switching of the Shubnikov de Haas oscillations in molecular Dirac fermion system (BETS)I

arXiv:2105.05425 · doi:10.1103/PhysRevB.103.205140

Abstract

We report on the Shubnikov de Haas (SdH) oscillations in the quasi two-dimensional molecular conductor (BETS)I [BETS: bis(ethylenedithio)tetraselenafulvalene] laminated on polyimide films at 1.7 K. From the SdH phase factor, we verified experimentally that the material is in the Dirac fermion phase under pressure. (BETS)I is in the vicinity of the phase transition between strongly correlated insulating and Dirac fermion phases, and is a possible candidate for an ambient-pressure molecular Dirac fermion system. However, the SdH oscillations indicate that the Berry phase is zero at ambient pressure. Under pressure, a Berry phase emerges when the metal-insulator crossover is almost suppressed at 0.5 GPa. The results contrast those for the pioneering molecular Dirac fermion system (BEDT-TTF)I [BEDT-TTF: bis(ethylenedithio)tetrathiafulvalene] in which Dirac fermions and semiconducting behavior are simultaneously observed.

12 pages, 10 figures, including Supplemental Material

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