High tunnel magnetoresistance and magnetism in metastable bcc CoMn-based magnetic tunnel junctions
arXiv:2010.03775
Abstract
Co-rich CoMn alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effect in MgO(001)-barrier MTJs with electrodes comprising those bcc films. The single phase bcc CoMn(001) films were pseudomorphically grown on Cr(001) for 0.14 < < 0.50 with a sputtering technique. The magnetization was larger than that of pure Co for = 0.14-0.25 and deceased with further increasing . This behavior mainly stemmed from the composition dependence of magnetic moment of Mn that exceeded 2 at the maximum, unveiled by X-ray magnetic circular dichroism. Correspondingly, within the range of 0.25 < < 0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K) as increased. We discussed the relationship between the magnetism and high TMR ratio with different with the aid of the ab-initio band structure calculations.
21 pages, 10 figures