activity
20042020
most citedRoadmap for Emerging Materials for Spintronic Device Applications

224 citations · 562 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2020

Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction

Kelvin Elphick, Kenta Yoshida, Tufan Roy +8

In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TM…

cond-mat.mtrl-sci2020★ 1 cited

High tunnel magnetoresistance and magnetism in metastable bcc CoMn-based magnetic tunnel junctions

Kazuma Kunimatsu, Tufan Roy, Jun Okabayashi +7

Co-rich CoMn alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration in bulk. On…

cond-mat.mes-hall2020

Spin Current Generation by a Surface Plasmon Polariton

Theodorus Jonathan Wijaya, Daigo Oue, Mamoru Matsuo +5

Surface plasmon polariton (SPP) is an electromagnetic wave which is tightly localised beyond the diffraction limit at metallic surfaces. Recently, it is theoretically proposed that…

cond-mat.mtrl-sci2020★ 25 cited

Anisotropy in Antiferromagnets

K O'Grady, J Sinclair, K Elphick +4

Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are cha…

cond-mat.mtrl-sci2019★ 32 cited

Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

Tomoki Tsuchiya, Tufan Roy, Kelvin Elphick +8

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabri…

cond-mat.mtrl-sci2017★ 8 cited

Integration of antiferromagnetic Heusler compound RuMnGe into spintronic devices

Jan Balluff, Teodor Huminiuc, Markus Meinert +2

We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet RuMnGe is used to p…