Lasing in the Space Charge-Limited Current Regime
arXiv:2009.12730 · doi:10.1103/PhysRevB.103.L121301
Abstract
We introduce an analytical model for ideal organic laser diodes based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. Expressions for the threshold current and voltage agree well with drift-diffusion modeling of complete p-i-n devices and an analytical bound is established for laser operation in the presence of annihilation and excited-state absorption losses. These results establish a foundation for the development of organic laser diode technology.