Electronic noise of warm electrons in semiconductors from first-principles

Abstract

The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first-principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.

32 pages, 4 figures, submitted

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Cited by in corpus (5)

• High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering
• Two-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si
• Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering
• High-field charge transport and noise in p-Si from first principles
• Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation