Hall coefficient of semimetals

Abstract

A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density are associated with band degeneracies, Fermi surface topology, and interband scattering. Experiments which can measure these deviations are proposed.

arXiv comment3 Figures, including supplementary material

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Cited by in corpus (8)

• Generating a topological anomalous Hall effect in a non-magnetic conductor
• Engineering exotic second-order topological semimetals by periodic driving
• Topological transport of mobile impurities
• Carrier concentrations and optical conductivity of a band-inverted semimetal in two and three dimensions
• Hall map and breakdown of Fermi liquid theory in the vicinity of a Mott insulator
• Metallic transport of hard core bosons
• Degeneracy-projected polarization formulas for Hall-type conductivities
• Quantum Transport Theory of Strongly Correlated Matter