Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices

Abstract

To manufacture faster electron devices, the industry has entered into the nanoscale dimensions and Terahertz (THz) working frequencies. The discrete nature of the few electrons present simultaneously in the active region of ultra-small devices generate unavoidable fluctuations of the current at THz frequencies. The consequences of this noise remain unnoticed in the scientific community because its accurate understanding requires dealing with consecutive multi-time quantum measurements. Here, a modeling of the quantum measurement of the current at THz frequencies is introduced in terms of quantum (Bohmian) trajectories. With this new understanding, we develop an analytic model for THz noise as a function of the electron transit time and the sampling integration time, which finally determine the maximum device working frequency. The model is confirmed by either semi-classical or full-quantum time-dependent Monte Carlo simulations. All these results show that intrinsic THz noise increases unlimitedly when the volume of the active region decreases. All attempts to minimize the low signal-to-noise ratio of these ultra-small devices to get effective THz working frequencies are incompatible with the basic elements of the scaling strategy. One can develop THz electron devices, but they cannot have ultra-small dimensions. Or, one can fabricate ultra-small electron devices, but they cannot be used for THz working frequencies.

arXiv comment37 pages and 10 figures

References in corpus (17)

• Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
• Quantum Equilibrium and the Origin of Absolute Uncertainty
• Non-Markovian Quantum State Diffusion
• Pure-state quantum trajectories for general non-Markovian systems do not exist
• Non-Markovian stochastic Schrödinger equations: Generalization to real-valued noise using quantum measurement theory
• Exact closed master equation for Gaussian non-Markovian dynamics
• General Non-Markovian structure of Gaussian Master and Stochastic Schrödinger Equations
• Non-Markovian continuous quantum measurement of retarded observables
• Exact solution for a non-Markovian dissipative quantum dynamics
• Weak Values from Displacement Currents in Multiterminal Electron Devices
• Injection statistics simulator for dynamic analysis of noise in mesoscopic devices
• Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources
• Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices
• Computation of many-particle quantum trajectories with exchange interaction: Application to the simulation of nanoelectronic devices
• Limitations of the intrinsic cut-off frequency to correctly quantify the speed of nanoscale transistors
• Quantum time-dependent Monte Carlo simulation of electron devices with 2D linear-band materials: a genuine TeraHertz signature for graphene
• Time-dependent simulation of particle and displacement currents in THz graphene transistors

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