Integrated Avalanche Photodetectors for Visible Light
arXiv:2009.01486 · doi:10.1038/s41467-021-22046-x
Abstract
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications wavelengths. Here, we report the first monolithically integrated avalanche photodetector (APD) for visible light. Our devices are based on a doped silicon rib waveguide with a novel end-fire input coupling to a silicon nitride waveguide. We demonstrate a high gain-bandwidth product of 216 12 GHz at 20 V reverse bias measured for 685 nm input light, with a low dark current of 0.12 A . This performance is very competitive when benchmarked against other integrated APDs operating in the infrared range. With CMOS-compatible fabrication and integrability with silicon nitride platforms, our devices are attractive for visible-light photonics applications in sensing and communications.
Main text (11 pages, 4 figures, 1 table) + supplementary (6 pages, 5 figures)
References in corpus (4)
Cited by in corpus (4)
- Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform
- Thermally Induced Refractive Index Trimming of Visible-Light Silicon Nitride Waveguides Using Suspended Heaters
- Realizing a robust, reconfigurable active quenching design for multiple architectures of single-photon avalanche detectors
- Broadband Waveguide-Coupled Photodetectors in a Submicrometer-Wavelength Silicon Photonics Platform