Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2
arXiv:2009.00873 · doi:10.1103/PhysRevResearch.2.033342
Abstract
We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.
8 pages, 5 figures
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Cited by in corpus (5)
- Progress and prospects in magnetic topological materials
- Axion Electrodynamics in Topological Materials
- Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuInAs
- Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2
- Surface state evolution induced by magnetic order in axion insulator candidate EuIn2As2