Unveiling the polarity of the spin-to-charge current conversion in $B{i}_{2}S{e}_3$

Abstract

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $B{i}_{2}S{e}_3$ onto single crystalline layers of YIG $(Y_{3}F{e}_5{O}_{12})$ and polycrystalline films of Permalloy $(Py=N{i}_{81}F{e}_{19})$. Pure spin current was injected into the $B{i}_{2}S{e}_3$ layer by means of the spin pumping process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $B{i}_{2}S{e}_3/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $B{i}_{2}S{e}_3$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\le |{\lambda }_{IREE}|\le$ 2.2 pm. These results support the fact that the surface states of $B{i}_{2}S{e}_3$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $B{i}_{2}S{e}_3$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $B{i}_{2}S{e}_3$ might lead to spintronic devices with fast and efficient spin-charge conversion.

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• Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
• Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
• Planar Hall effect induced spin rectification effect and its strong impact on spin pumping measurements
• Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi${}_x$Se${}_{1-x}$
• Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS${}_2$ Heterostructures at Room Temperature
• Probing the Spin-Momentum Locking in Rashba Surfaces via Spin Current
• Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
• Interfacial spin-orbit-coupling-induced strong spin-to-charge conversion at an all-oxide ferromagnetic /quasi-two-dimensional electron gas interface